Silicon pressure sensors have silicon based sensing diaphragms which have a very high elasticity and semiconductor strain gauges implanted in the silicon substrate which produce a high span sensitivity.
Silicon pressure transducers have a high mV/V output signal, high overpressure and very good non-linearity, hysteresis and repeatability measurement precision.
Pressure transducers & transmitters with silicon strain gauge sensing diaphragms which have output signals with good linearity, hysteresis and short term repeatability. Semiconductor pressure sensors also have high overpressure ratings and sensitivity due to the high gauge factors of the semiconductor strain gauges.
Choose a silicon pressure sensor from the list below to view product specification details and request a price quotation.
- 33X High Accuracy Digital Output Pressure Sensor - High precision pressure transducer with an accuracy of 0.05% full scale with a RS485, USB or RS232 digital interface for connecting to a PC.
- IMPLR Low Range All Stainless Steel OEM Pressure Sensor - Low cost sensor for measuring small pressure ranges from 0-50 mbar (10 inH2O) to 0-1000 mbar (15 psi) of liquids or gases.
- DMP331 Precision Pressure Transmitter - Stainless steel pressure transmitter with ranges from 100mbar up to 40 bar gauge or absolute. Special options for ATEX , SIL2 and compound ranges.
- DS200 Combined Pressure Switch, Gauge and Sensor - Three in one electronic pressure switch, digital pressure gauge and pressure sensor with pressure ranges from 100 mbar up to 600 bar (1.5 to 9000 psi).
- DMP343 Low Range Pneumatic Pressure Sensor - DMP343 pneumatic pressure sensor for measuring very low range pressures on pneumatic control systems, heating, ventilation and air conditioning systems (HVAC) .
- UPS-HSR USB Pressure Sensor with High Sample Rate Logging - USB ready digital pressure sensor for recording pressures with a high speed sample rate of up to 1 kHz to a computer. The UPS-HSR is supplied with a 2m long USB cable, PC software and case. Choose a pressure range from 2.5 bar up to 5000 bar with a G1/4 or 1/4 NPT male up to 1500 bar, and AE F-250-C female up to 5000 bar.
- PD33X Digital Differential Pressure Sensor - High precision differential pressure transducer with accuracy of 0.1% full scale. Available with RS485, USB or RS232 for connecting to a computer.
- PD39X Twin Absolute Digital DP Sensor - Digital pressure sensor with 3 separate channels for measuring P1, P2 and DP readings plus 2 temperature channels.
- PD33X High Accuracy Differential Pressure Transmitter - High precision compact wet wet differential pressure transmitter with digitally corrected output signal in ranges from 1 to 30 bar
- DMP333 High Range Precision Pressure Transmitter - The DMP 333 is a stainless steel 316L wetted parts pressure sensor for high pressure ranges on applications such as hydraulic test benches, presses, and hydraulic actuation.
- DS200P Sanitary Low Range Pressure Gauge, Switch and Sensor - All in one electronic switch, gauge and sensor designed specifically for use in the food, drink and biomedical industry for measuring process pressures.
- DS210 Combined Low Pressure Switch, Indicator and Sensor - Low range three in one pressure switch, pressure indicator and pressure sensor for use on pneumatics and HVAC applications.
- PD39X High Differential Pressure Transmitter - High pressure differential sensor with high over-pressure in scaleable differential ranges from 3 bar up to 300 bar differential.
Advantages of Silicon Pressure Sensors
Pressure sensors that utilise silicon sensing elements offer many advantages over other pressure sensing technologies, they are small, lightweight, highly repeatable, stable over time, dynamically responsive and very sensitive to variations in pressure.
The base diaphragm material is typically ‘n’ type mono-crystalline layer Silicon which is 100 % elastic to its breaking point and therefore is a perfect material for use as a sensing diaphragm.
The strain gauges which are the key elements for converting pressure into an electrical signal are created by ion implantation of masked areas of the silicon in to create tiny ‘p’ type regions at strategic points on the diaphragm surface. When a reverse bias voltage is applied between the ‘n’ type substrate and ‘p’ type regions the ‘p’ type regions become electrical isolated and due to the relative increased conductivity of the ‘p’ type region they exhibit resistive characteristics and when pressure is applied the ‘p’ type regions behave as strain gauges. Since the strain gauges are chemically changed areas of a uniform piece of material they will deform almost perfectly with the stresses of the diaphragm without lag or separation and thus the repeatability of measured pressure points is very good over many pressure cycles.
The combination of a high elasticity material and near perfectly bonded and integrated strain gauges produces a structure with very little hysteresis ensuring that pressure readings are precise regardless of the direction of changing pressure.
High Gauge Factors
The p type region or semiconductor strain gauge is behaves in a similar way to more conventional foil strain gauges with a change in resistance when the gauges are stretched or squeezed, however there is an added semiconductor property which combines with the resistive variation to increase the sensitivity or gauge factor of the Silicon strain gauge. Thus high levels of voltage drop can be achieved across semiconductor strain gauges for a given pressure change which allows users to make better use of analogue to digital resolution and improve signal to noise ratios.
Small Size and Lightweight
Silicon piezo-resistive elements are manufactured in the same way that miniature silicon chips are that are used in micro-electronics. The combination of chemical etching micro-machining, doping and masking techniques to create mechanical structures with micro-electronic components enables the productions of very small sensing elements. This in turn helps engineers to design smaller pressure sensors since the sensing diaphragm for other technologies is often the limiting factor controlling the diameter of the final design.
Low Susceptibility to Acceleration
The small size and low weight of silicon sensing elements make them less susceptible to acceleration. Therefore these sensors are often used in aplications which have high levels of ‘G’, shock or vibration.
Long Term Stability
Semiconductor strain gauges are not glued, printed or electro-plated to the surface to the sensing diaphragm. And instead are a chemically changed part of the same material. Over time strain gauge bonds can deteriorate or change with pressure and temperature cycling causing instabilities in the sensor performance. Semiconductor strain gauges have no bonds and therefore are extremely stable in comparison.
High Overpressure Rating
The higher gauge factors of semiconductor strain gauges compared to other types of strain gauge make it possible to use stiffer diaphragms for a given pressure range to allow a high overpressure rating to be specified without compromising too much sensitivity. The high elasticity of Silicon also makes it possible to strain Silicon further than other less elastic diaphragm materials with virtually no resulting stress.
Due to high sensitivity of semiconductor strain gauges the thickness to cross-sectional area is relatively high for a sensing diaphragm plus the miniature size results in a very high natural frequency in the order of 10 – 100 kHz. This combined with the elasticity and atomically bonded strain gauges makes Silicon strain gauge diaphragms highly responsive to rapid changes in pressure.